Samsung completes development of 12-layer 3D TSV DRAM for high-capacity HBM2 modules

[Redaktion]

The jump from 8-layer to 12-layer 3D TSV DRAM designs will enable AIB integrators to include as much as 96 GB of HBM2 DRAM on a single board, increasing the memory bus to 4,096-bit. The resulting increase in memory bandwidth will prove beneficial to AI, HPC and FPGA applications.

https://www.notebookcheck.net/Samsung-completes-development-of-12-layer-3D-TSV-DRAM-for-high-capacity-HBM2-modules.437612.0.html