Quote from: Bau on January 31, 2023, 20:19:44Intel is in late with implementing new processes that make use of Extreme UV lithography, but in reality they are not so behind in terms of density respect to TSMC and Samsung.Density is one thing, gate leakage is another. It is obvious while Samsung and Intel can fit as many transistors into the same silicon footprint, their gates are leaking much more currents causing a lot of waste and heat. This is most evident on ARM chips because Samsung and MediaTek use the same ARM reference design, so any difference in efficiency is the result of the fab process. While here we can only guess how much of the deficiency is due to poor architectural design and how much is due to fabrication.