Thanks to the new FOWLP production process, the GDDR6W dies have the same size as the GDDR6X ones, but come with 32 Gb capacity instead of 16 Gb and the I/O pin count is also doubled. System-level bandwidth can reach 1.4 TB/s with 512 I/O pins, while HBM2E offers 1.6 TB/s through 4096 pins, making Samsung's new memory standard considerably more efficient.